BUL52B

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BUL52B www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 400 10 8 12 4 100 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=0.1A ;IB=20mA IC=1A; IB=0.2A IC=2A; IB=0.4A IC=3A; IB=0.6A IC=1A; IB=0.2A IC=2A ;IB=0.4A IC=3...