SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier
Preliminary
SZP-5026Z
4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
RFMD Green, Ro...
SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier
Preliminary
SZP-5026Z
4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26
www.datasheet4u.com
Product Description
RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar
Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package.
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET
Vcc
Features
P1dB =33dBm @ 5V 802.11a 54Mb/s Class AB Performance POUT =25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down Control<1μs
9
InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Vbias RFIN
SZP-5026 RFOUT
Applications
Active Bias
802.16 WiMAX Driver or Output Stage 5GHz 802.11 WLAN and ISM Applications
Power Up/Down Control Power Detector
Parameter
Frequency of Operation Output Power at 1dB C...