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K30N60HS

Infineon

SKW30N60HS


Description
SKW30N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature ...



Infineon

K30N60HS

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