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4NB80

STMicroelectronics
Part Number 4NB80
Manufacturer STMicroelectronics
Description STB4NB80
Published May 18, 2009
Detailed Description ® www.datasheet4u.com STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA V DSS 80...
Datasheet PDF File 4NB80 PDF File

4NB80
4NB80

Overview
® www.
datasheet4u.
com STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA V DSS 800 V 800 V R DS(on) 3.
3 Ω 3.
3 Ω ID 4A 4A TYPE STB4NB80 STB4NB80FP s s s s s TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 D2PAK TO-263 (Suffix "T4") 3 12 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabil...


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