3DK2222A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors www.datasheet4u.com 3DK2222A TRANSISTOR ( NPN ) SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature unless Test Value 75 40 6 600 300 -55to+150 otherwise specified） MIN 75 40 6 TYP Units V V V mA mW ℃ MAX UNIT V V V 0.1 0.1 0.1 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO HFE(1) DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time VCE(sat) VBE(sat) conditions IE=0 IC= 10μA， IC= 10mA， IB=0 IE=10μA， IC=0 VCB=70 V , IE=0 VCE=60V , VEB= 3V , VBE(off)=3V IC=0 μA μA μA VCE=10V, IC= 150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA VCE=20V, IC= 20mA 100 40 42 300 0.6 0.3 1.2 300 10 25 225 60 V V MHz nS nS nS nS fT td tr tS tf f=100MHz VCC=30V, VBE(off)=-0.5...