DatasheetsPDF.com

BUH515D

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH515D www.datasheet4u.com DESCRIPTION ...


SavantIC

BUH515D

File Download Download BUH515D Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH515D www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 5 8 50 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1300V; VBE=0 VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V IF=5A 5 MIN www.datasheet4u.com BUH515D SYMBOL VCEsat VBEsat ICES-1 ICES-2 IEBO hFE VF TYP. MAX 1.5 1.3 10 0.2 2 200 10 2 UNIT V V µA mA mA V Switching times ts tf Storage time IC=5A;IB1=1.5A;-IB2=2.5A; VCC=400V Fall time 170 260 ns 2.4 3.6 µs THERMAL CHARACTERISTICS ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)