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BUH313

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH313 www.datasheet4u.com DESCRIPTION ·...


SavantIC

BUH313

File Download Download BUH313 Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH313 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·Horizontal deflection for color TV ·Switch mode power supplies. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Total power dissipation Operating junction temperature Storage temperature tp<5ms TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1300 600 10 5 10 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=3A ;IB=0.75A IC=3A ;IB=0.75A VCE=1300V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V 10 5.5 MIN 600 10 TYP. www.datasheet4u.com BUH313 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 MAX UNIT V V 1.5 1.3 0.2 0.1 V V mA mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.8 UNIT /W ...




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