AOT8N60

AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR G 8 5 32 3.2 150 300 5 147 1.17 -50 to 150 300 AOT8N60 65 0.5 0.85 8* 5* Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A A EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 50 0.4 AOTF8N60 65 2.5 Units °C/W °C/W °C/W Maximum Case-to-Sink D,F RθJC Maximum Junctio...