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AOT7N60 Dataheets PDF



Part Number AOT7N60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 7A N-Channel MOSFET
Datasheet AOT7N60 DatasheetAOT7N60 Datasheet (PDF)

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested .

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AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 7A < 1.2W TO-220 Top View TO-220F D G D S G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N60 AOTF7N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.8 4.8* 28 3 135 270 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.54 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT7N60 65 0.5 AOTF7N60 65 -- Maximum Junction-to-Case RqJC 0.65 3.25 * Drain current limited by maximum junction temperature. Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.7.0: January 2021 www.aosmd.com Page 1 of 6 AOT7N60/AOTF7N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A gFS Forward Transconductance VDS=40V, ID=3.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 600 700 V 0.72 V/ oC 1 mA 10 ±100 nA 3 3.9 4.5 V 1 1.2 W 12 S 0.74 1 V 7 A 28 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 685 861 1035 pF 65 84 100 pF 5.2 6.6 7.9 pF 3 4.1 6.2 W SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=7A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=7A, RG=25W tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/ms,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/ms,VDS=100V 19.3 23 28 nC 3.8 5 5.5 nC 9.3 11.2 13.5 nC 25 ns 49.5 ns 51.5 ns 43.5 ns 212 255 306 ns 2.0 2.6 3.1 mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3A, VDD=150V, RG=25Ω, Starting TJ=25°C APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.7.0: January 2021 www.aosmd.com Page 2 of 6 AOT7N60/AOTF7N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) RDS(ON) (W) 15 10V 12 6.5V 9 6V 6 3 VGS=5.5V 0 0 5 10.


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