Document
AOT7N60/AOTF7N60
600V,7A N-Channel MOSFET
General Description
Product Summary
The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
700V@150℃ 7A < 1.2W
TO-220
Top View
TO-220F
D
G D S
G D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N60
AOTF7N60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
7
7*
4.8
4.8*
28
3
135
270 50 5
TC=25°C Power Dissipation B Derate above 25oC
PD
192
38.5
1.54
0.3
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT7N60 65 0.5
AOTF7N60 65 --
Maximum Junction-to-Case
RqJC
0.65
3.25
* Drain current limited by maximum junction temperature.
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev.7.0: January 2021
www.aosmd.com
Page 1 of 6
AOT7N60/AOTF7N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250mA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS
Forward Transconductance
VDS=40V, ID=3.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
600
700
V
0.72
V/ oC
1 mA
10
±100 nA
3
3.9 4.5
V
1
1.2
W
12
S
0.74 1
V
7
A
28
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
685 861 1035 pF
65
84 100 pF
5.2 6.6 7.9 pF
3
4.1 6.2
W
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=7A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr tD(off)
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=300V, ID=7A, RG=25W
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/ms,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/ms,VDS=100V
19.3 23
28
nC
3.8
5
5.5 nC
9.3 11.2 13.5 nC
25
ns
49.5
ns
51.5
ns
43.5
ns
212 255 306
ns
2.0 2.6 3.1 mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3A, VDD=150V, RG=25Ω, Starting TJ=25°C
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AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale
Rev.7.0: January 2021
www.aosmd.com
Page 2 of 6
AOT7N60/AOTF7N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
RDS(ON) (W)
15 10V
12 6.5V
9
6V
6
3 VGS=5.5V
0
0
5
10.