AOT500

www.datasheet4u.com AOT500 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 mΩ (VGS = 10V) General Description AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications). TO-220 D Top View Drain Connected to Tab G 10Ω G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage clamped VGS Gate-Source Voltage clamped Continuous Drain TC=25°C 80 Current G ID TC=100°C 57 Continuous Drain Gate Current +50 IDG Continuouse Gate Source Current +50 IGS Pulsed Drain Current C Avalanche Current L=100uHH Repetitive avalanche energy H Units V V A mA A A mJ W °C IDM IAR 250 50 125 115 58 -55 to 175 EAR TC=25°C PD Power Dissipation B TC=100°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A Maximum Junction-to-Ambient B Maximum Junction-to-Case Steady-State Steady-State Symbol RθJA RθJC Typ 60 0.7 M...