AOTF4N60

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 4A < 2.2W TO-220 Top View TO-220F D D S D G AOT4N60 DS G AOTF4N60(L) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC VDS VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. AOT4N60 4 2.7 104 0.83 AOT4N60 65 0.5 1.2 G S AOTF4N60 600 ±30 4* 2.7* 16 2.5 94 188 50 5 35 0.28 -55 to 150 300 AOTF4N60 65 -3.6 AOTF4N6...