AOTF14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT14N50L & AOTF14N50L & AOB14N50L Top View TO-220 TO-220F Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω 100% UIS Tested 100% Rg Tested TO-263 D2PAK D D G D S AOTF14N50 G D S AOB14N50 G S S AOT14N50 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50/AOB14N50 Drain-Source Voltage 500 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C AOTF14N50 Units V V VGS TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 278 2.2 14 11 ±30 14* 11* 56 6 540 1080 5 50 0.4 -55 to 150 300 AOT14N50/AOB14N50 65 0.5 0.45 AOTF14N50 65 -2.5 A A mJ mJ V/ns W W/ oC...