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BU508AFI

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AFI www.datasheet4u.com DESCRIPTION...


SavantIC

BU508AFI

File Download Download BU508AFI Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AFI www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 50 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Transition frequency Storage time Fall time CONDITIONS IC=100mA ;IB=0, IE=10mA ;IC=0 IC=4.5A ;IB=2 A IC=4.5A ;IB=2 A IC=1A; VCE=5V VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=0.1A; VCE=5V;f=5MHz 8 MIN 700 10 www.datasheet4u.com BU508AFI SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE ICES IEBO fT ts tf TYP. MAX UNIT V V ...




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