BDV64A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV64/64A/64B/64C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV64 VCBO Collector-base voltage BDV64A BDV64B BDV64C BDV64 VCEO Collector-emitter voltage BDV64A BDV64B BDV64C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 -0.5 125 3.5 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV64 Collector-emitter breakdown voltage BDV64A IC=-30mA, IB=0 BDV64B BDV64C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV64 Collector cut-off current BDV64A BDV64B BDV64C BDV64 Collector cut-off current BDV64A BDV64B BDV64C IEBO hFE VEC Emitter cut-off current DC current gain Diode forward voltage IC=-5A ,IB=-20mA IC=-5A ; VCE=-4V VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150 VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 VCB=-100V, IE=0 VCB=...