isc Silicon PNP Power Transistors
BDT82/84/86/88
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitt...
isc Silicon
PNP Power
Transistors
BDT82/84/86/88
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88
·Complement to Type BDT81/83/85/87 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT82
-60
VCBO
Collector-Base Voltage
BDT84 BDT86
-80 -100
BDT88
-120
BDT82
-60
VCEO
BDT84 Collector-Emitter Voltage
BDT86
-80 -100
BDT88
-120
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IB
Base Current
-4
PC
Collector Power Dissipation TC=25℃
125
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 1 70
UNIT ℃/W ℃/W
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isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT82
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT84 BDT86
IC= -30mA; IB= 0
BDT88
VCE(sat)-1 VCE(sat)-2 VBE(on)
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
Collector-Emitter S...