BDT84

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81/83/85/87 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT82 -60 VCBO Collector-Base Voltage BDT84 BDT86 -80 -100 BDT88 -120 BDT82 -60 VCEO BDT84 Collector-Emitter Voltage BDT86 -80 -100 BDT88 -120 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -15 ICM Collector Current-Peak -20 IB Base Current -4 PC Collector Power Dissipation TC=25℃ 125 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT82 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT84 BDT86 IC= -30mA; IB= 0 BDT88 VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A Collector-Emitter S...