BD900

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD895/897/899/901 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896/898/900/902 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD896 VCBO Collector-base voltage BD898 BD900 BD902 BD896 VCEO Collector-emitter voltage BD898 BD900 BD902 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current-DC Base current Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -300 70 2 150 -65~150 V A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD896 Collector-emitter breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IE=-8A IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10B;tp=20µs IC=-3A ,IB=-12mA IC=-3A ; VCE=-3V VCB=...