2SD2579

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2579 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 20 60 W UNIT V V V A A 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD2579 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 tf Collector-emitter sustaining voltage IC=100mA; IB=0 IC=5 A;IB=1A IC=5 A;IB=1A VCB=800V ;IE=0 VCE=1500V ;RBE=0 VEB=4V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=5V IC=4A;RL=50? IB1=0.8A;-IB2=1.6A;VCC=200V 800 V Collector-emitter saturation voltage 5 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA Collector cut-off current 1.0 mA Emitter cut-off current 1.0 mA DC current gain 5 8 DC current gain 20 35 Fall time 0.3 µs 2 SavantIC Semiconductor Product Specification S...