Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1568 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SD2399
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Single pulse TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 4 6 30 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50µA; IE=0 IC=1mA; IB=0 IC=2A ; IB=4mA VCB=80V;IE=0 VEB=5V;IC=0 IC=2A ; VCE=3V IE=0 ; VCB=10V; f=1MHz IE=-0.2A ; VCE=5V;f=10MHz 1000 MIN 80 80
www.datasheet4u.com
2SD2399
SYMBOL V(BR)CBO V(BR)CEO VCEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V
1.5 0.1 3.0 10000 35 40
V mA mA
pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
2SD2399
Fig.2 Outline dimensions
3
.