SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2390
www.datasheet4u.com
D...
SavantIC Semiconductor
Product Specification
Silicon
NPN Darlington Power
Transistors
2SD2390
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,
regulator and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 150 5 10 1 100 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Darlington Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 95 55 MIN 150
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2SD2390
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT
TYP.
MAX
UNIT V
2.5 3.0 100 100
V V µA µA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=10B IB1=- IB2=7mA VCC=70V 0.5 10.0 1.1 µs µ...