SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2386
www.datasheet4u.com
D...
SavantIC Semiconductor
Product Specification
Silicon
NPN Darlington Power
Transistors
2SD2386
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min)
APPLICATIONS ·Power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 7 0.1 70 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Darlington Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A ;IB=6mA IC=6A ; VCE=5V VCB=140V IE=0 VEB=5V; IC=0 IC=6A ; VCE=5V IC=10A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 5000 2000 90 30 MIN 140
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2SD2386
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT
TYP.
MAX
UNIT V
2.5 3.0 5.0 5.0 30000
V V µA µA
pF MHz
hFE-1 Classifications A 5000-12000 B 9000-18000 C 150...