2SD2340

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2340 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 130 110 5 6 50 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=130V; IE=0 VCE=110V IB=0 VEB=5V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=10V 5000 MIN 110 www.datasheet4u.com 2SD2340 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE fT TYP. MAX UNIT V 2.5 3.0 100 100 100 V V µA µA µA 20 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD2340 Fig.2 outline dimensions (unindic...