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2SD2257 Dataheets PDF



Part Number 2SD2257
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD2257 Datasheet2SD2257 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PA.

  2SD2257   2SD2257



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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector dissipation TC=25 Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 8 ±3 ±5 0.3 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=10mA ;IB=0 IC=1.5A ;IB=1.5mA IC=1.5A ;IB=1.5mA VCB=100V ;IE=0 VEB=8V; IC=0 IC=1A ; VCE=2V IC=2A ; VCE=2V IE=1A 0.8 2000 2000 MIN 100 www.datasheet4u.com 2SD2257 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECF TYP. MAX UNIT V 1.5 2.0 10 4.0 V V µA mA 2.0 V Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=1.5mA VCC=30V ,RL=20A Duty cycleB1% 0.5 2.0 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD2257 Fig.2 Outline dimensions 3 .


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