SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2024
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD2024
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 10 2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD2024
CHARACTERISTICS
www.datasheet4u.com
Tj=25
unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=50µA; IE=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
1000
20000
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
www.datasheet4u.com
2SD2024
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
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