2SD1895

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PFa package www.datasheet4u.com ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification ·Optimum for 90W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1895 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 140 5 15 8 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 30000 MHz MIN 140 2.5 3.0 100 100 100 TYP. MAX UNIT V V V µA µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT Switching times ton tstg tf Turn-on time St...