2SD1893

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1893 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 130 110 5 6 10 50 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=130V; IE=0 VCE=110V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 MIN 110 www.datasheet4u.com 2SD1893 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT TYP. MAX UNIT V 2.5 3.0 100 100 100 V V µA µA µA 30000 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time...