2SD1888

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1888 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 120 120 6 6 10 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1888 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50µA; IE=0 IC=5mA;IB=0 IC=3A ;IB=6mA VCB=120V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IE=-0.2A ; VCE=5V;f=10MHz IE=0 ; VCB=10V;f=1MHz 2000 40 50 MIN 120 120 1.5 100 3.0 20000 MHz pF TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CBO V(BR)CEO VCEsat ICBO IEBO hFE fT COB 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1888 Fig.2 Outline dimensions (unindicate...