Ordering number:EN5293
NPN Triple Diffused Planar Silicon Transistor
2SC5299
Ultrahigh-Definition CRT Display Horizonta...
Ordering number:EN5293
NPN Triple Diffused Planar Silicon
Transistor
2SC5299
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5299]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=8A, IB=2A IC=8A, IB=2A
2.8 2.0 1.0
123
5.45
5.45
3.5 20.4
2.0
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings
Unit
1500 V
800 V
6V
10 A
25 A
3.0 W
70 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ max
10 µA
1.0 mA
800
V
1.0 mA
5V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high l...
