SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1446
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1446
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High collector to base voltage VCBO ·DARLINGTON APPLICATIONS ·For power amplification
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 5 6 10 40 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1446
CHARACTERISTICS
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Tj=25
unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)EBO VCEO(SUS) VCEsat VBEsat ICBO hFE fT
Emitter-base breakdown voltage
IE=0.1A; IC=0 IC=2A; L=10mH IC=3A ;IB=0.06A IC=3A ;IB=0.06A VCB=350V; IE=0 IC=2A ; VCE=2V IC=1A ; VCE=10V;
5
V
Collector-emitter sustaining voltage
400
V
Collector-emitter saturation voltage
1.5
V
Base-emitter saturation voltage
2.5
V
Collector cut-off current
100
µA
DC current gain
500
Transition frequency
15
MHz
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
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2SD1446
Fig.2 Outline dime...