2SD1291

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1291 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 13 65 130 -55~130 UNIT V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD1291 SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2.5A ; VCE=10V 4 12 ts Storage time IC=2.5A ILeak=0.8A,LB=5µH 4 8 µs tf Fall time 1 µs VF Diode forward voltage IF=-4A,IB=0 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKA...