SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
www.datasheet4u.com
DES...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1277 2SD1277A
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB951/951A ·High DC current gain ·High-speed switching APPLICATIONS ·For medium speed power switching
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SD1277 VCBO Collector-base voltage 2SD1277A 2SD1277 VCEO Collector-emitter voltage 2SD1277A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 80 7 8 12 45 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1277 2SD1277A
CHARACTERISTICS
www.datasheet4u.com
Tj=25
unless otherwise specified PARAMETER 2SD1277 IC=30mA , IB=0 2SD1277A IC=4A; IB=8mA IC=4A ;IB=8mA VCB=60V ;IE=0 0.1 2SD1277A VCB=80V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=3V IC=4A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 500 2000 20 10000 MHz 2 mA mA 80 1.5 2 V V CONDITIONS MIN 60 V TYP. MAX UNIT
SYMBOL
V(BR)CEO
Collector-emitter breakdown voltage
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2SD1277
ICBO
IEBO hFE-1 hFE-2 fT
Emitter cut-off current DC current gain DC current gain Transition frequency...