2SD1276

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1276 VCBO Collector-base voltage 2SD1276A 2SD1276 VCEO Collector-emitter voltage 2SD1276A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 80 5 4 8 40 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SD1276 IC=30mA , IB=0 2SD1276A IC=3A ;IB=12mA IC=5A ;IB=20mA VCE=3V; IC=3A 2SD1276 2SD1276A 2SD1276 2SD1276A VCB=60V ;IE=0 0.2 VCB=80V; IE=0 VCE=30V; IB=0 0.5 VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=0.5V IC=3A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 1000 2000 20 10000 MHz 2 mA mA mA 80 2 4 2.5 V V V CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL V(BR)CEO VCEsat-1 VCEsatVBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICBO IC...