2SD1267

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1267 Collector-base voltage 2SD1267A 2SD1267 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1267A Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base 80 5 4 8 2 W 40 150 -55~150 V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1267 IC=30mA ,IB=0 2SD1267A IC=4A, IB=0.4A IC=3A ; VCE=4V VEB=5V; IC=0 2SD1267 2SD1267A 2SD1267 2SD1267A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1267 2SD1267A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 1.5 2.0 1.0 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current ICEO 0.7 VCE=60V; IB=0 VCE=60V; VBE=0 0.4 VCE=80V; VBE=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=5V,f=1MHz 70 15 20 250 mA ICES Collector cut-off current...