SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1263 2SD1263A
www.datasheet4u.com
DES...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1263 2SD1263A
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SD1263 VCBO Collector-base voltage 2SD1263A 2SD1263 VCEO Collector-emitter voltage 2SD1263A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base 300 5 0.75 1.5 2 W V A A Open emitter 400 250 V CONDITIONS VALUE 350 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1263 IC=30mA ,IB=0 2SD1263A IC=1A, IB=0.2A IC=1A ; VCE=10V VEB=5V; IC=0 2SD1263 2SD1263A 2SD1263 2SD1263A VCE=150V; IB=0 VCE=200V; IB=0 VCE=350V; VBE=0 VCE=400V; VBE=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V CONDITIONS
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2SD1263 2SD1263A
SYMBOL
MIN 250
TYP.
MAX
UNIT
VCEO
Collector-emitter voltage
V 300 1.0 1.5 1.0 1.0 1.0 1.0 1.0 70 10 30 MHz 250 V V mA mA mA mA mA
VCEsat VBE IEBO
Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current
ICEO
ICES
Collector cut-off current
hFE-1 hFE-2 fT
DC current gain DC current gain Transition frequ...