2SD1168

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1168 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 10 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=5A; RBE=109;L=2mH IE=1mA; IC=0 IC=2 A;IB=1A IC=2 A;IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE tf ts DC current gain Fall time IC=1.5 A; IB1=0.2A; IB2=-0.7A Storage time 2 IC=1A ; VCE=4V 9 MIN 800 5 www.datasheet4u.com 2SD1168 SYMBOL VCER(SUS) V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V V 1.0 1.5 0.1 V V mA 1.0 25 0.5 µs µs hFE Classifications Q 9-18 P 15-25 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE ...