SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD950
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DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD950
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage capability APPLICATIONS ·Line-operated horizontal deflection output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 4.5 42 130 -65~130 UNIT V V A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500m A;IC=0 IC=2 A;IB=0.75 A IC=2 A;IB=0.75 A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 VF tf ts DC current gain DC current gain Diode forward voltage Fall time IC=2A;IBend=0.75A;LB=10µH Storage time IC=1A ; VCE=5V IC=2A ; VCE=10V IF=4A 8 3 MIN 5
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2SD950
SYMBOL V(BR)EBO VCEsat VBEsat
TYP.
MAX
UNIT V
5.0 1.5 50 1.0
V V µA mA
1.7 0.9 11
V µs µs
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
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2SD950
Fig.2 Outline dimensions
3
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