2SD834

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers ·Switching regulators ·Motor controls PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD834 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Open base Collector-emitter voltage Emitter-base voltage Collector current-continuous Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector 180 10 4 0.3 25 150 -55~150 V A A W Open emitter CONDITIONS VALUE 250 200 V UNIT V THERMAL CHARACTERISTICS SYMBOL R>jc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1A ; IB=0 IC=10mA ; IB=0 IC=0.1mA ; IE=0 IE=10mA ; IC=0 IC=2A;IB=2mA IC=2A;IB=2mA VCB=250V; IE=...