SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package www.datash...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
2SD612 2SD612K
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2SD612 Collector-base voltage 2SD612K 2SD612 VCEO VEBO IC ICM PD Tj Tstg Collector-emitter voltage 2SD612K Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 Total power dissipation TC=25 Junction temperature Storage temperature 10 150 -55~150 Open collector Open base 35 5 2 3 1 W V A A Open emitter 35 25 V CONDITIONS VALUE 25 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SD612 IC=1mA; RBE=; 2SD612K 2SD612 IC=10µA ;IE=0 2SD612K IE=10µA ;IC=0 IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCB=20V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V IC=50mA ; VCE=10V f=1MHz ; VCB=10V CONDITIONS
www.datasheet4u.com
2SD612 2SD612K
SYMBOL
MIN 25
TYP.
MAX
UNIT
V(BR)CEO
V 35 25 V 35 5 0.3 1.1 0.8 1.5 1 1 60 30 100 30 MHz pF 320 V V V µA µA
V(BR)CBO
Collector-base breakdown voltage
V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
Emitter-base breakdown voltage Collector-emitter saturation volta...