SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD211
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DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD211
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 10 100 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A ; IB=0.5A IC=5A ; IB=0.5A VCB=60V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V 30 8 MIN 60 6
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2SD211
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V
1.5 2.5 0.1 0.1
V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
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2SD211
Fig.2 outline dimensions (unindica...