2SD425

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type 2SB555/556 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SD425 VCBO Collector-base voltage 2SD426 2SD425 VCEO Collector-emitter voltage 2SD426 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 5 12 12 100 150 -65~150 V A A W Open emitter 120 140 V CONDITIONS VALUE 140 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS www.datasheet4u.com 2SD425 2SD426 SYMBOL MIN TYP. MAX UNIT 2SD425 V(BR)CEO Collector-emitter breakdown voltage 2SD426 IC=0.1A ;IB=0 140 V 120 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 IC=7A; IB=0.7A 5 V 2SD425 VCEsat Collector-emitter saturation voltage 2SD426 3.0 IC=6A; IB=0.6A IC=7A ; VCE=5V VCB=50V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=2A ; VCE=5V 40 2.5 V VBE ICBO IEBO hFE fT Base-emitter on voltage V Collector cut-off current 0.1 mA Emitter cut-off current 0.1 mA DC current ...