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IRF6623PBF

International Rectifier

HEXFET Power MOSFET

PD - 97085 IRF6623PbF IRF6623TRPbF RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOS...


International Rectifier

IRF6623PBF

File Download Download IRF6623PBF Datasheet


Description
PD - 97085 IRF6623PbF IRF6623TRPbF RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs www.datasheet4u.com l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible ‰ l Compatible with existing Surface Mount Techniques ‰ l l DirectFET™ Power MOSFET Š VDSS 20V RDS(on) max 5.7mΩ@VGS = 10V 9.7mΩ@VGS = 4.5V Qg(typ.) 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of proc...




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