STP60NF06LFP

N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET TYPE STB60NF06L STP60NF06L STP60NF06LFP s s s s STB60NF06L STP60NF06L STP60NF06LFP VDSS 60 V 60 V 60 V RDS(on) <0.014 Ω <0.014 Ω <0.014 Ω ID 60 A 60 A 60 A(*) 3 1 2 s s s TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 175 oC OPERATING RANGE LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 TO-220FP D2PAK TO-263 (Suffix “T4”) 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter STB60NF06L STP60NF06L VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) VISO Tstg Tj due to Rth value Value STP60NF06LFP 60 60 ± 15 60 42 240 110 0.73 20 320 ------55 to 175 (1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, T j ≤ TJMAX. (2) Starting T j = 25 oC, ID = 30A, VDD = 30V Unit Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuou...