2SC5242

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5242 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 230 230 5 15 1.5 130 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 230 www.datasheet4u.com 2SC5242 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 3.0 1.5 5 5 160 V V µA µA 30 200 MHz pF hFE-1 classifica...