RADIATION HARDENED POWER MOSFET THRU-HOLE
www.datasheet4u.com
PD - 90674C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radia...
Description
www.datasheet4u.com
PD - 90674C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A
IRHM7250 JANSR2N7269 200V, N-CHANNEL
REF: MIL-PRF-19500/603 ® ™ RAD Hard HEXFET TECHNOLOGY
QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269
1000K Rads (Si) 0.10 Ω HEXFET®
TO-254AA
International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain ...
Similar Datasheet