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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527AF
DESCRIPTION...
www.datasheet4u.com
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BU2527AF
DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W
www.datasheet4u.com
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
BU2527AF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0
1.3 0.25 2.0 0.25
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=6A ; VCE=5V
5
9
CC
Collector capacitance
VCB=10V;IE=0; f=1.0MHz
...