Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
www.datasheet4u.com
SOT-23 ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
www.datasheet4u.com
SOT-23 Formed SMD Package
CMBT5400
HIGH VOLTAGE
TRANSISTOR
P–N–P
transistor
Marking CMBT5400 = K2
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 5 V
–V CBO –V CEO –V EBO –IC Ptot hFE
max. max. max. max. max min. max.
130 120 5 500 250 40 180
V V V mA mW
RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC
max. max. max. max.
130 120 5 500
V V V mA
Continental Device India Limited
Data Sheet
Page 1 of 3
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CMBT5400
Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient
Ptot Tstg Tj
max 250 –55 to +150 max. 150
mW °C °C
Rth j–a
200
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 100 µA; IE = 0...