CMBT4401

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 1 V Total power dissipation up to Tamb = 25 °C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage Collector–base voltage Emitter–base voltage Collector current (DC) Total power dissipation up to Tamb = 25°C Storage temperature range Junction temperature VCEO IC hFE Ptot max. max. min. max. max 40 V 600 mA 100 300 250 mW VCEO VCBO VEBO IC Ptot Tstg Tj max. 40 V max. 60 V max. 6 V max. 600 mA max 250 mW –55 to +150 ° C max. 150 ° C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4401 THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter breakdown voltage IC = 1.0 mA; IB = 0 Collector–base breakdown voltage IC = 100 µA; IE = 0 Emitter–base breakdown voltage IE = 100 µA; IC = 0 Base cut–off current VCE = 35 V; VEB = 0.4 V Collector cut–off current VCE = 35 V; VEB = 0.4 V D.C. current gain IC = 0.1 mA; VCE = 1 V IC = 1.0 mA; VCE = 1 V IC = 10 mA; VCE = 1 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 2...