CMBT4126

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4126 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4126 = 5E www.datasheet4u.com Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 2 mA; –VCE = 1 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. max. 25 25 4 200 350 120 360 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC max. max. max. max. 25 25 4 200 V V V mA Continental Device India Limited Data Sheet Page 1 of 4 www.datasheet4u.com CMBT4126 Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Ptot Tstg Tj max 350 –55 to +150 max. 150 mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 10 µA; IE = 0 Emitter–base breakdown voltage –V(BR)EBO min. –IE...