CMBT4123

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 2 mA; –VCE = 1 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. max. 40 30 5 200 225 50 150 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Ptot Total power dissipation at Tamb = 25°C max. max. max. max. max 40 30 5 200 225 V V V mA mW Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4123 Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Tstg Tj –55 to +150 max. 150 °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 10 mA; IE = 0 Em...