CMBT2222A

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking CMBT2222 = lB CMBT2222A = lP PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2222 CMBT2222A Collector–base voltage (open ernitter) VCB0 Collector–emitter voltage (open base) VCE0 Emitter base voltage (open collector) VEB0 Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 150mA; VCE = 10V hFE lC = 500mA; VCE = 10V Transition frequency at f = 100 MHz fT IC = 20 mA; VCE = 20 V max. max. max. max. max. 60 30 5,0 600 250 100 to 300 75 40 6,0 V V V mA mW > > 30 250 40 300 MHz Continental Device India Limited Data Sheet Page 1 of 4 www.datasheet4u.com CMBT2222 CMBT2222A RATINGS (at TA = 25°C unless otherwise specified) Limiting values CMBT2222 CMBT2222A Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c,) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature range Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 °C unless otherwise specified max. rnax. max. max. max. max. 60 30 5,0 600 250 –55 to +150 150 75 40 6,0 V V V mA mW °C °...